Datasheet > DWX317

DWX317

更新时间： 2024-09-16 01:15:11

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Dual Bias Resistor Transistors

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数据手册

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DWX317 数据手册

SEMICONDUCTOR

DWX Series

TECHNICAL DATA

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

DWX Series , two complementary BRT devices are housed in the SOT–363 package

SOT-363/SC-88

which is ideal for low power surface mount applications where board space is at a premium.

R₁

• Simplifies Circuit Design

• Reduces Board Space

R₂

Q₂

• Reduces Component Count

• Pb-Free Package is available

R₂

Q₁

R₁

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2, – minus sign for Q 1(PNP) omitted)

Rating

Symbol Value

Unit

Vdc

MARKING DIAGRAM

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

T_A= 25°C

Symbol

Max

Unit

xx = Device Marking

(See Page 2)

P_D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

DEVICE MARKING

INFORMATION

Derate above 25°C

mW/°C

°C/W

See specific marking information in

the device marking table on page 2 of

this data sheet.

Thermal Resistance –

Junction-to-Ambient

R _θ

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

2015. 1. 28

Revision No : 0

1/29

12 3 4 5 6 7...29

中文翻译

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