Page
Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
2
2
3
4
5
FRED, Rectifier Diode and Thyristor Chips in Planar Design
IGBT Chips
VCES
IC
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
600 ...1200 V
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
6
6
6
7
600 V
600 V
1200 ... 1700 V
MOSFET Chips
VDSS
RDS(on)
HiPerFETTM Power MOSFET
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.06 ... 1.2 Ω
8-10
11
12
PolarHTTM MOSFET, very Low RDS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
30 ... 110 Ω
12
Layouts
13-17
Bipolar Chips
VRRM / VDRM
IF(AV)M / IT(AV)M
Rectifier Diodes
FREDs
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
800 ... 2200 V
1600 ... 1800 V
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
35
36
IXYS reserves the right to change limits, test conditions and dimensions
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