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DTD143TKT147 PDF预览

DTD143TKT147

更新时间: 2024-10-29 14:37:51
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
4页 169K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,

DTD143TKT147 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.65
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

DTD143TKT147 数据手册

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3
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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3
DTD143TVTV4 ROHM

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3