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DTC314TUTA106 PDF预览

DTC314TUTA106

更新时间: 2024-09-09 20:57:47
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 66K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN

DTC314TUTA106 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:15 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

DTC314TUTA106 数据手册

 浏览型号DTC314TUTA106的Datasheet PDF文件第2页浏览型号DTC314TUTA106的Datasheet PDF文件第3页 
DTC314TU / DTC314TK  
Transistors  
Digital transistors (built-in resistor)  
DTC314TU / DTC314TK  
!External dimensions (Units : mm)  
!Features  
In addition to the features of regular  
digital transistors,  
DTC314TU  
2.0 0.2  
0.9 0.1  
1.3 0.1  
1) Low saturation voltage, typically  
VCE(sat)=40mV at IC/IB=50mA/2.5mA,  
makes these transistors ideal for  
muting circuits.  
0.65 0.65  
0.7 0.1  
0.2  
(1)  
(2)  
0~0.1  
(3)  
2) These transistors can be used at  
high current levels, IC=600mA.  
+0.1  
0  
0.3  
0.15 0.05  
(1) Emitter  
(2) Base  
(3) Collector  
All terminals have same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
Abbreviated symbol : H04  
2.9 0.2  
1.9 0.2  
0.95 0.95  
DTC314TK  
!Structure  
NPN digital transistor  
(Built-in resistor type)  
+0.2  
1.1  
0.1  
0.8 0.1  
(2)  
(1)  
0~0.1  
!Equivalent circuit  
(3)  
+0.1  
0.15  
+0.1  
0.06  
0.4  
(1) Emitter  
(2) Base  
(3) Collector  
0.05  
ROHM : SMT3  
EIAJ : SC-59  
All terminals have same dimensions  
Abbreviated symbol : H04  
C
B
R1  
E
B : Base  
C : Collector  
E : Emitter  
!Absolute maximum ratings (Ta=25°C)  
Limits(DTC314T  
)
Parameter  
Symbol  
Unit  
U
K
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
30  
15  
V
V
5
V
I
C
600  
200  
150  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
Tstg  
55~+150  

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