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DTC123JUBTL PDF预览

DTC123JUBTL

更新时间: 2024-11-12 19:53:07
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 66K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3F, 3 PIN

DTC123JUBTL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-85
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.17其他特性:BUILT IN BIAS RESISTOR RATIO 21
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTC123JUBTL 数据手册

 浏览型号DTC123JUBTL的Datasheet PDF文件第2页浏览型号DTC123JUBTL的Datasheet PDF文件第3页 
Transistors  
DTC123JUB  
100mA / 50V Digital transistors  
(with built-in resistors)  
DTC123JUB  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
UMT3F  
2.0  
zFeatures  
0.9  
0.32  
(3)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for  
operation, making the device design easy.  
(1)  
0.65 0.65  
1.3  
(2)  
0.13  
Each lead has same dimensions  
(1) IN  
(2) GND  
(3) OUT  
Abbreviated symbol : 142  
zStructure  
zEquivalent circuit  
NPN silicon epitaxial planar transistor type  
(Resistor built-in)  
OUT  
R1  
IN  
R2  
zPackaging specifications  
GND  
OUT  
Package  
UMT3F  
Taping  
TL  
Packaging type  
Code  
IN  
Part No.  
Basic ordering unit (pieces)  
3000  
GND  
DTC123JUB  
R1  
=2.2k, R =47kΩ  
2
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
CC  
IN  
50  
V
V
Input voltage  
V
5 to +12  
Collector current  
Output current  
Ic(max)1  
100  
100  
mA  
mA  
mW  
°C  
Io  
2  
Power dissipation  
Junction temperature  
P
D
200  
Tj  
Tstg  
150  
Range of storage temperature  
55 to +150  
°C  
1 Characteristics of built-in transistor  
2 Each terminal mounted on a recommended land  
1/2  

DTC123JUBTL 替代型号

型号 品牌 替代类型 描述 数据表
DTC123JUAT106 ROHM

完全替代

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
DTC123EKA ROHM

类似代替

Digital transistors (built-in resistors)
DTC123JMT2L ROHM

功能相似

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

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