Datasheet > DTC123TET1G

DTC123TET1G

更新时间： 2024-09-25 01:19:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	139K
描述
Digital Transistors (BRT)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

DTC123TET1G 数据手册

MUN2238, MMUN2238L,

MUN5238, DTC123TE,

DTC123TM3, NSBC123TF3

Digital Transistors (BRT)

R1 = 2.2 kW, R2 = 8 kW

www.onsemi.com

NPN Transistors with Monolithic Bias

Resistor Network

PIN CONNECTIONS

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

MARKING DIAGRAMS

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC-Q101 Qualified and

PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

SOT−23

CASE 318

STYLE 6

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

XXX MG

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

CBO

CEO

STYLE 3

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

October, 2016 − Rev. 2

DTC123T/D

12 3 4 5 6 7...12

中文翻译

下载PDF

DTC123TET1G 替代型号

型号	品牌	替代类型	描述	数据表
DDTC123TE-7	DIODES	功能相似	NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR

与DTC123TET1G相关器件

型号	品牌	获取价格	描述	数据表
DTC123TKA	ROHM	获取价格	Digital transistor (built-in resistor)
DTC123TKAT146	ROHM	获取价格	Built-in bias resistors enable the configuration of an inverter circuit without connecting
DTC123TM	ROHM	获取价格	本产品是电阻内置型晶体管。由于内置了偏压用电阻，因此输入侧无需外接电阻即可构成逆变电路。
DTC123TM3	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
DTC123TM3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
DTC123TN3	CYSTEKEC	获取价格	PNP Digital Transistors (Built-in Resistors)
DTC123TS3	ETC	获取价格	Mini size of Discrete semiconductor elements
DTC123Y	UTC	获取价格	NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
DTC123Y	ROHM	获取价格	DIGITAL TRANSISTOR
DTC123Y_10	UTC	获取价格	NPN DIGITAL TRANSISTOR

与DTC123TET1G相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC123TET1G

DTC123TET1G 数据手册

DTC123TET1G 替代型号

与DTC123TET1G相关器件

与DTC123TET1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC123TET1G

DTC123TET1G 数据手册

DTC123TET1G 替代型号

与DTC123TET1G相关器件

与DTC123TET1G相关文章

您还可以找

您在本页遇到什么问题？