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DTC115EET1 PDF预览

DTC115EET1

更新时间: 2024-01-10 05:33:24
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 106K
描述
Bias Resistor Transistor

DTC115EET1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-75
包装说明:CASE 463-01, SC-75, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.17Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signals表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTC115EET1 数据手册

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DTC114EET1 Series  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base−emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC−75/SOT−416 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 1  
R1  
Simplifies Circuit Design  
Reduces Board Space  
BASE  
(INPUT)  
R2  
Reduces Component Count  
PIN 2  
The SC−75/SOT−416 Package Can be Soldered Using Wave or  
Reflow  
EMITTER  
(GROUND)  
The Modified Gull−Winged Leads Absorb Thermal Stress During  
Soldering Eliminating the Possibility of Damage to the Die  
Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
MARKING  
DIAGRAM  
Pb−Free Packages are Available  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
SC−75/SOT−416  
CASE 463  
STYLE 1  
xx  
M
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
V
CEO  
1
Collector-Emitter Voltage  
Collector Current  
50  
Vdc  
I
C
100  
mAdc  
xx = Specific Device Code  
M = Date Code  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
THERMAL CHARACTERISTICS  
the package dimensions section on page 2 of this data sheet.  
Rating  
Symbol  
Value  
Unit  
Total Device Dissipation,  
P
D
FR−4 Board (Note 1) @ T = 25°C  
Derate above 25°C  
200  
1.6  
mW  
mW/°C  
A
Thermal Resistance,  
R
600  
°C/W  
q
JA  
Junction−to−Ambient (Note 1)  
Total Device Dissipation,  
P
D
FR−4 Board (Note 2) @ T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
Thermal Resistance,  
Junction−to−Ambient (Note 2)  
R
400  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 × 1.0 Inch Pad  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 6  
DTC114EET1/D  

DTC115EET1 替代型号

型号 品牌 替代类型 描述 数据表
DTC115EET1G ONSEMI

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DTC115EETL ROHM

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