Datasheet > DTC115EM

DTC115EM

更新时间： 2023-12-06 20:03:53

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	516K
描述
SOT-723

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中文翻译

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数据手册

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DTC115EM 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

DTC115EM

DIGITAL TRANSISTOR (NPN)

FEATURES

Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the

input.They also have the advantage of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy

PIN CONNENCTIONS, MARKING and EQUIVALENT CIRCUIT

Equivalent Circuit

DTC115EM

SOT-723

1. IN

2. GND

3. OUT

MARKING:29

MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Symbol

Parameter

Limit

Unit

V_CC

Supply Voltage

Input Voltage

V_IN

-10～+40

100

I_O

Output Current

Power Dissipation

℃

P_D

100

T_J,T_stg

Operation Junction and Storage Temperature Range

-55～+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Conditions

V_CC=5V,I_O=100µA

Min

Typ

Max

Unit

0.5

Input voltage

V_O=0.3V,I_O=1mA

I_O/I_I=5mA/0.25mA

V_I=5V

Output voltage

Input current

0.1

0.3

0.15

0.5

μA

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

I_O(off)

G_I

V_CC=50V,V_I=0V

V_O=5V,I_O=5mA

R₁

100

130

1.2

kΩ

R₂/R₁

f_T

0.8

V_O=10V ,I_O=5mA,f=100MHz

250

MHz

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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