5秒后页面跳转
DTC115EKA PDF预览

DTC115EKA

更新时间: 2024-01-06 23:26:58
品牌 Logo 应用领域
乐山 - LRC 晶体数字晶体管开关光电二极管
页数 文件大小 规格书
1页 28K
描述
Digital transistors(built-in resistors)

DTC115EKA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.61
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC):0.02 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):27
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC115EKA 数据手册

  
LESHAN RADIO COMPANY, LTD.  
Digital transistors (built-in resistors)  
• Features  
1)Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors.  
DTC115EKA  
2) The bias resistors consist of thinfilm resistors with complete isolation to allow  
positive biasing of the input,and parasitic effects are almost completely  
eliminated.  
3) Only the on/off conditions need to be set for operation, making device design  
easy.  
4) Higher mounting densities can be achieved.  
R1  
OUT  
IN  
R2  
GND  
OUT  
IN  
GND  
EIAJ: SC— 59  
Absolute maximum ratings(Ta=25 °C)  
Parameter  
Supply voltage  
Input voltage  
symbol  
Limits  
50  
unit  
V
V
V
cc  
–40 ~ +10  
20  
V
IN  
I O  
Output current  
mA  
I C(Max.)  
100  
Power dissipation  
P
200  
150  
mW  
°C  
d
Junction temperature  
Storage temperature  
T j  
T stg  
–55~+150  
°C  
Elecrical characteristics(Ta=25°C)  
Parameter  
symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
V
0.5  
V CC=5V, I O=100µA  
V O= 0.3V, I O=1mA  
I O / I I= 5mA/0.25mA  
I(off)  
Input voltage  
V I(on)  
V O(on)  
I I  
3
Output Voltage  
Input current  
0.1  
0.3  
0.15  
0.5  
V
mA  
µA  
V = 5V  
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
I O(off)  
G I  
V CC=50V, V I= 0 V  
82  
70  
0.8  
V O= 5V, I O= 5mA  
R1  
100  
1
130  
1.2  
K  
R 2 / R 1  
f
250  
MHz  
V CE=10V, I E=– 5 mA, f =100MHz*  
T
*Transition frequency of the device  
P13–1/1  

DTC115EKA 替代型号

型号 品牌 替代类型 描述 数据表
DTC115EKA ROHM

功能相似

Digital transistors (built-in resistors)

与DTC115EKA相关器件

型号 品牌 获取价格 描述 数据表
DTC115EKAFRAT146 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
DTC115EKAT147 ROHM

获取价格

Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
DTC115EKAT246 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
DTC115EL ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
DTC115ELA ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SIP
DTC115EL-AE3-6-R UTC

获取价格

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
DTC115EL-AE3-R UTC

获取价格

NPN DIGITAL TRANSISTOR
DTC115EL-AL3-R UTC

获取价格

NPN DIGITAL TRANSISTOR
DTC115EL-AN3-6-R UTC

获取价格

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
DTC115EL-AN3-R UTC

获取价格

NPN DIGITAL TRANSISTOR