SEMICONDUCTOR
DTA201 ~ DTA214 /
DTA217 / DTA223
TECHNICAL DATA
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
3
2
1
SOT-23
PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 1
• Simplifies Circuit Design
• Reduces Board Space
BASE
(INPUT)
R2
PIN 2
EMITTER
• Reduces Component Count
(GROUND)
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
We declare that the material of product compliance with RoHS requirements.
•
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
VCBO
VCEO
IC
Value
50
Unit
Vdc
50
Vdc
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
PD
Max
Unit
mW
Total Device Dissipation
TA = 25 C
Derate above 25 C
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
C/W
C/W
C/W
C
Thermal Resistance –
Junction-to-Ambient
RθJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance –
Junction-to-Lead
RθJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
2007. 12. 18
Revision No : 0
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