Datasheet > DTA214T3G

DTA214T3G

更新时间： 2024-11-10 00:57:39

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
7页	248K
描述
Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DTA214T3G 数据手册

SEMICONDUCTOR

DTA201 ~ DTA214 /

DTA217 / DTA223

TECHNICAL DATA

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

SOT-23

PIN 3

COLLECTOR

(OUTPUT)

R₁

PIN 1

• Simplifies Circuit Design

• Reduces Board Space

BASE

(INPUT)

R₂

PIN 2

EMITTER

• Reduces Component Count

(GROUND)

• The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

We declare that the material of product compliance with RoHS requirements.

•

MAXIMUM RATINGS (T_A= 25 C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

P_D

Max

Unit

Total Device Dissipation

T_A= 25 C

Derate above 25 C

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

C/W

Thermal Resistance –

Junction-to-Ambient

R_θJA

508 (Note 1.)

311 (Note 2.)

Thermal Resistance –

Junction-to-Lead

R_θJL

174 (Note 1.)

208 (Note 2.)

Junction and Storage

Temperature Range

T_J, T_stg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

2007. 12. 18

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

下载PDF

与DTA214T3G相关器件

型号	品牌	获取价格	描述	数据表
DTA214YA	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SIP
DTA214YAA	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
DTA214YC	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 70MA I(C) \| SOT-23
DTA214YCA	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
DTA214YCAT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
DTA214YCAT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.07A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
DTA214YCAT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
DTA214YCT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.07A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
DTA214YCT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.07A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
DTA214YE	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23VAR