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DTA1

更新时间： 2024-09-16 22:29:55
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
3页 168K
描述
1.0A Bidirectional Thyristor

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中文翻译

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DTA1 技术参数

生命周期：Obsolete包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.76Is Samacsys：N
配置：SINGLE最大直流栅极触发电流：5 mA
最大直流栅极触发电压：2 V最大维持电流：10 mA
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL认证状态：Not Qualified
最大均方根通态电流：1 A断态重复峰值电压：400 V
子类别：TRIACs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
触发设备类型：TRIACBase Number Matches：1

DTA1 数据手册

 浏览型号DTA1的Datasheet PDF文件第2页浏览型号DTA1的Datasheet PDF文件第3页 
Ordering number : EN2283B  
Silicon Planar Type  
DTA1  
1.0A Bidirectional Thyristor  
Features  
• Low AC power control use.  
• Peak OFF-state voltage : 200 to 400V  
• RMS ON-state current : 1A  
• TO-92 package.  
Absolute Maximum Ratings at Ta=25°C  
DTA1C  
200  
DTA1E  
400  
unit  
V
Repetitive Peak  
V
DRM  
T(RMS)  
TSM  
OFF-StateVoltage  
RMS ON-State Current  
I
I
Tc=74°C, single-phase  
full-wave  
Peak 1 cycle, 50Hz  
1ms≤t≤10ms  
→
1.0  
A
Surge ON-State Current  
Amperes Squared-Seconds  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
→
→
→
→
→
→
→
8
0.32  
1
0.1  
±0.5  
A
A2s  
W
W
A
∫ i2T·dt  
P
P
I
f≥50Hz, duty≤10%  
GM  
G(AV)  
GM  
f≥50Hz, duty≤10%  
f≥50Hz, duty≤10%  
Peak Gate Voltage  
V
GM  
±6  
125  
–40 to +125  
0.2  
V
Junction Temperature  
Strage Temperature  
Tj  
Tstg  
°C  
°C  
g
Weght  
→
Electrical Characteristics at Ta=25°C  
min  
typ  
max  
10  
unit  
µA  
Repetitive Peak  
I
Tj=25°C, V =V  
D DRM  
DRM  
OFF-State Current  
Peak ON-State Voltage  
Holding Current  
Gate Trigger Current* (I)  
V
I
=1.5A  
1.5  
10  
5
V
mA  
mA  
mA  
mA  
mA  
V
V
V
V
V
TM  
TM  
D
I
I
I
I
I
V =12V, gate open  
V =12V, R =20Ω  
D L  
V =12V, R =20Ω  
V =12V, R =20Ω  
V =12V, R =20Ω  
V =12V, R =20Ω  
V =12V, R =20Ω  
V =12V, R =20Ω  
H
GT  
GT  
GT  
GT  
(II)  
(III)  
(IV)  
5
D
D
D
L
L
L
10  
2
5
2
2
–
2
Gate Trigger Voltage* (I)  
V
GT  
V
GT  
V
GT  
V
GT  
V
GD  
D L  
(II)  
(III)  
(IV)  
D
D
D
L
L
L
V =12V, R =20Ω  
Tc=125°C, V =V  
Between junction and case, AC  
Gate Nontrigger Voltage  
Thermal Resistance  
0.2  
–
40  
D
DRM  
Rth(j-c)  
°C/W  
Package Dimensions 1192B  
(unit : mm)  
* : The gate trigger mode is shown below.  
Trigger mode  
T2  
+
T1  
–
G
+
–
I
II  
+
–
III  
IV  
–
+
+
–
–
+
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN  
O0797GI/3089MO, TS No.2283-1/3  
123

中文翻译

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