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DSSK80-0035B PDF预览

DSSK80-0035B

更新时间: 2024-11-02 20:05:47
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
2页 47K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN

DSSK80-0035B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-247AD, 3 PINReach Compliance Code:compliant
风险等级:5.64其他特性:HIGH RELIABILITY, LOW NOISE, FREEWHEELING, UL RECOGNIZED
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.51 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:900 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:40 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:35 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSSK80-0035B 数据手册

 浏览型号DSSK80-0035B的Datasheet PDF文件第2页 
DSSK 80-0035/45B  
IFAV = 2x40 A  
VRRM = 35 - 45 V  
VF = 0.45 V  
Power Schottky Rectifier  
with common cathode  
Preliminary Data  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
A
35  
45  
35  
45  
DSSK 80-0035B  
DSSK 80-0045B  
A
C
AB)  
A
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Test Conditions  
Maximum Ratings  
IFRMS  
IFAV  
IFAV  
70  
40  
80  
A
A
A
TC = 125°C; rectangular, d = 0.5  
TC = 125°C; rectangular, d = 0.5; per device  
Features  
International standard package  
Very low VF  
IFSM  
EAS  
IAR  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
900  
57  
2
A
mJ  
A
Extremely low switching losses  
Low IRM-values  
IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive  
VA =1.5 • VRRM typ.; f=10 kHz; repetitive  
Epoxy meets UL 94V-0  
(dv/dt)cr  
1000  
V/µs  
Applications  
Rectifiers in switch mode power  
TVJ  
TVJM  
Tstg  
-55...+150  
150  
-55...+150  
°C  
°C  
°C  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
Ptot  
Md  
TC = 25°C  
155  
W
Advantages  
mounting torque  
0.45...0.55  
4...5  
Nm  
lb.in.  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Low noise switching  
Low losses  
Weight  
typical  
6
g
Dimensions see end of catalog  
Symbol  
IR   
VF  
Test Conditions  
Characteristic Values  
typ.  
max.  
TVJ = 25°C VR = VRRM  
TVJ = 100°C VR = VRRM  
10  
250  
mA  
mA  
IF = 40 A; TVJ = 125°C  
0.45  
0.51  
0.69  
V
V
V
IF = 40 A; TVJ  
=
25°C  
IF = 80 A; TVJ = 125°C  
RthJC  
RthCH  
0.8  
K/W  
K/W  
0.25  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 1998 IXYS All rights reserved  
36  

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