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DSSK80-003B PDF预览

DSSK80-003B

更新时间: 2024-11-20 20:28:35
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
2页 68K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 30V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN

DSSK80-003B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE应用:POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.39 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:600 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSSK80-003B 数据手册

 浏览型号DSSK80-003B的Datasheet PDF文件第2页 
DSSK 80-0025B  
DSSK 80-003B  
IFAV = 2x40 A  
VRRM = 25 / 30 V  
VF = 0.39 V  
Power Schottky Rectifier  
with common cathode  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
A
A
C
A
25  
30  
25  
30  
DSSK 80-0025B  
DSSK 80-003B  
AB)  
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Very low VF  
• Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAV  
IFAV  
70  
40  
80  
A
A
A
TC = 130°C; rectangular, d = 0.5  
TC = 130°C; rectangular, d = 0.5; per device  
• Epoxy meets UL 94V-0  
IFSM  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
600  
10  
A
mJ  
EAS  
IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive  
VA =1.5 • VRRM typ.; f=10 kHz; repetitive  
Applications  
• Rectifiers in switch mode power  
supplies (SMPS)  
IAR  
6
A
(dv/dt)cr  
5000  
V/µs  
• Free wheeling diode in low voltage  
converters  
TVJ  
TVJM  
Tstg  
-55...+150  
150  
-55...+150  
°C  
°C  
°C  
Advantages  
Ptot  
TC = 25°C  
mounting torque  
typical  
155  
0.8...1.2  
6
W
Nm  
g
• High reliability circuit operation  
• Low voltage peaks for reduced  
protection circuits  
• Low noise switching  
• Low losses  
Md  
Weight  
Dimensions see pages D2 - 87-88  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 100°C VR = VRRM  
40  
250  
mA  
mA  
VF  
IF = 40 A; TVJ = 125°C  
IF = 40 A; TVJ = 25°C  
IF = 80 A; TVJ = 125°C  
0.39  
0.48  
0.56  
V
V
V
RthJC  
RthCH  
0.8  
K/W  
K/W  
0.25  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  

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