5秒后页面跳转
DSSK80-0025B PDF预览

DSSK80-0025B

更新时间: 2024-11-20 20:28:35
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
2页 68K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 25V V(RRM), Silicon, TO-247AD, TO-247AD, 3 PIN

DSSK80-0025B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.74其他特性:HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.48 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:600 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:40 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:25 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSSK80-0025B 数据手册

 浏览型号DSSK80-0025B的Datasheet PDF文件第2页 
DSSK 80-0025B  
DSSK 80-003B  
IFAV = 2x40 A  
VRRM = 25 / 30 V  
VF = 0.39 V  
Power Schottky Rectifier  
with common cathode  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
A
A
C
A
25  
30  
25  
30  
DSSK 80-0025B  
DSSK 80-003B  
AB)  
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Very low VF  
• Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAV  
IFAV  
70  
40  
80  
A
A
A
TC = 130°C; rectangular, d = 0.5  
TC = 130°C; rectangular, d = 0.5; per device  
• Epoxy meets UL 94V-0  
IFSM  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
600  
10  
A
mJ  
EAS  
IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive  
VA =1.5 • VRRM typ.; f=10 kHz; repetitive  
Applications  
• Rectifiers in switch mode power  
supplies (SMPS)  
IAR  
6
A
(dv/dt)cr  
5000  
V/µs  
• Free wheeling diode in low voltage  
converters  
TVJ  
TVJM  
Tstg  
-55...+150  
150  
-55...+150  
°C  
°C  
°C  
Advantages  
Ptot  
TC = 25°C  
mounting torque  
typical  
155  
0.8...1.2  
6
W
Nm  
g
• High reliability circuit operation  
• Low voltage peaks for reduced  
protection circuits  
• Low noise switching  
• Low losses  
Md  
Weight  
Dimensions see pages D2 - 87-88  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 100°C VR = VRRM  
40  
250  
mA  
mA  
VF  
IF = 40 A; TVJ = 125°C  
IF = 40 A; TVJ = 25°C  
IF = 80 A; TVJ = 125°C  
0.39  
0.48  
0.56  
V
V
V
RthJC  
RthCH  
0.8  
K/W  
K/W  
0.25  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  

与DSSK80-0025B相关器件

型号 品牌 获取价格 描述 数据表
DSSK80-0035A IXYS

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, TO-247AD,
DSSK80-0035B LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 35V V(RRM), Silicon, TO-247AD, TO-247A
DSSK80-003B IXYS

获取价格

Power Schottky Rectifier with common cathode
DSSK80-003B LITTELFUSE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 30V V(RRM), Silicon, TO-247AD, TO-247A
DSSK80-0045 IXYS

获取价格

Power Schottky Rectifier with common cathode
DSSK80-0045A IXYS

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 45V V(RRM), Silicon, TO-247AD,
DSSK80-0045B IXYS

获取价格

Power Schottky Rectifier with common cathode
DSSK80-0045B LITTELFUSE

获取价格

肖特基低Vf系列提供改进的正向电压特性和高达150V的击穿电压。
DSSK80-006B IXYS

获取价格

Power Schottky Rectifier with common cathode
DSSK80-006B LITTELFUSE

获取价格

肖特基低Vf系列提供改进的正向电压特性和高达150V的击穿电压。