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DSEC30-03A PDF预览

DSEC30-03A

更新时间: 2024-11-04 21:54:15
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描述
HiPerFRED Epitaxial Diode with common cathode and soft recovery

DSEC30-03A 数据手册

 浏览型号DSEC30-03A的Datasheet PDF文件第2页 
DSEC 30-03A  
HiPerFREDTM Epitaxial Diode  
with common cathode and soft recovery  
IFAV = 2x 15 A  
VRRM = 300 V  
trr = 30 ns  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
300  
300  
DSEC 30-03A  
A
C
A
C
A
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
50  
15  
A
A
TC = 140°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
110  
0.8  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
TVJ = 25°C; non-repetitive  
IAS = 2.5 A; L = 180 µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.3  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Epoxy meets UL 94V-0  
Ptot  
TC = 25°C  
mounting torque  
typical  
95  
0.8...1.2  
6
W
Nm  
g
Md  
Applications  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
100  
0.5  
mA  
mA  
VF  
IF = 15 A;  
TVJ = 150°C  
TVJ = 25°C  
1.20  
1.67  
V
V
RthJC  
RthCH  
1.6  
K/W  
K/W  
0.25  
30  
Advantages  
trr  
IF = 1 A; -di/dt = 100 A/ms;  
ns  
VR = 30 V; TVJ = 25°C  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
2.7  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
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