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DSEC30-06B PDF预览

DSEC30-06B

更新时间: 2024-11-24 22:29:55
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 49K
描述
HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

DSEC30-06B 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:8.32其他特性:SNUBBER DIODE, FREE WHEELING DIODE
应用:HYPERFAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.54 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:110 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEC30-06B 数据手册

 浏览型号DSEC30-06B的Datasheet PDF文件第2页 
DSEC 30-06B  
HiPerFREDTM Epitaxial Diode  
with common cathode and soft recovery  
IFAV = 2x15 A  
VRRM = 600 V  
trr = 25 ns  
A
C
A
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
600  
600  
DSEC 30-06B  
C (TAB)  
A
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Planar passivated chips  
• Very short recovery time  
• Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAVM  
50  
15  
A
A
TC = 135°C; rectangular, d = 0.5  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
110  
A
• Soft recovery behaviour  
• Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive; IAS = 1 A;  
L = 100 µH  
L = 20 mH  
0.1  
20  
mJ  
mJ  
Applications  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.1  
A
• Antiparallel diode for high frequency  
switching devices  
• Antisaturation diode  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
• Snubber diode  
Ptot  
TC = 25°C  
mounting torque  
typical  
95  
0.8...1.2  
6
W
Nm  
g
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
Md  
Weight  
• Inductive heating  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
Advantages  
• Avalanche voltage rated for reliable  
operation  
• Soft reverse recovery for low EMI/RFI  
• Low IRM reduces:  
- Power dissipation within the diode  
- Turn-onlossinthecommutatingswitch  
IR  
TVJ = 25°C; VR = VRRM  
TVJ = 150°C;VR = VRRM  
100  
0.5  
µA  
mA  
VF  
IF = 15 A;  
TVJ = 150°C  
TVJ = 25°C  
1.54  
2.51  
V
V
RthJC  
RthCH  
1.6  
K/W  
K/W  
0.25  
25  
trr  
IF = 1 A; -di/dt = 100 A/µs;  
VR = 30 V; TVJ = 25°C  
30  
ns  
Dimensions see Outlines.pdf  
IRM  
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
2.6  
A
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 2  

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