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DSEA16-08BC

更新时间： 2024-09-17 02:50:55
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THINKISEMI /
页数 文件大小 规格书
2页 270K
描述
16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

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DSEA16-08BC 数据手册

 浏览型号DSEA16-08BC的Datasheet PDF文件第2页 
DSEA16-02BC thru DSEA16-12BC  
DSEA16-02BC thru DSEA16-12BC  
Pb Free Plating Product  
16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit:inch(mm)  
Features  
※ ThinkiSemi latest&matured process FRD/FRED  
※ Low forward voltage drop  
※ High current capability  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
※ Low reverse leakage current  
※ High surge current capability  
Application  
※ Automotive Inverters and Solar Inverters  
※ Car Audio Amplifiers and Sound Device Systems  
※ Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
※Case:Isolated fully plastic ITO-220AB/TO-220F-3L package  
※ Epoxy: UL 94V-0 rate flame retardant  
※ Terminals: Solderable per MIL-STD-202 method 208  
※ Polarity: As marked on diode body  
※ Mounting position: Any  
(2.55)  
※ Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Prefix "DSED"  
Tandem Polarity  
Prefix "DSEE"  
Common Cathode  
Prefix "DSEC"  
Common Anode  
Prefix "DSEA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
DSEA16-02BC  
DSEA16-04BC DSEA16-06BC DSEA16-08BC  
DSEA16-10BC DSEA16-12BC  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
16.0  
160  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x8.0A=16.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@8.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
80  
3.0  
RθJC  
℃/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
12

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