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DSA30C200PB PDF预览

DSA30C200PB

更新时间: 2024-11-18 12:26:55
品牌 Logo 应用领域
IXYS 肖特基二极管
页数 文件大小 规格书
3页 94K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

DSA30C200PB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.3
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE应用:SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:85 W认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSA30C200PB 数据手册

 浏览型号DSA30C200PB的Datasheet PDF文件第2页浏览型号DSA30C200PB的Datasheet PDF文件第3页 
DSA 30 C 200 PB  
advanced  
VRRM  
IFAV = 2x  
VF  
=
200 V  
Schottky Diode Gen ²  
A
15  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Common Cathode  
=
0.78 V  
Part number  
1
2
3
DSA 30 C 200 PB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
low Irm values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
Housing: TO-220  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Low noise switching  
R a t i n g s  
min. typ. max.  
200  
Conditions  
Unit  
Symbol  
VRRM  
IR  
Definition  
TVJ  
TVJ  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
VR = 200V  
VR = 200V  
0.25 mA  
2.5 mA  
TVJ = 125°C  
TVJ 25°C  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
15A  
30A  
15A  
30A  
=
0.94  
1.10  
0.78  
0.95  
15  
V
V
V
V
A
V
Ω
TVJ = 125°C  
IFAV  
VF0  
rF  
TC = 150°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
0.53  
10.8  
for power loss calculation only  
slope resistance  
m
thermal resistance junction to case  
RthJC  
TVJ  
Ptot  
IFSM  
CJ  
1.75 K/W  
-55  
175  
85  
°C  
W
A
virtual junction temperature  
total power dissipation  
max. forward surge current  
junction capacitance  
TC  
=
=
=
25°C  
45°C  
25°C  
TVJ  
TVJ  
120  
t = 10 ms (50 Hz), sine  
VR = 24V; f = 1 MHz  
67  
pF  
IXYS reserves the right to change limits, conditions and dimensions.  
20100628  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  

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