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DS9-12F PDF预览

DS9-12F

更新时间: 2024-11-23 22:40:39
品牌 Logo 应用领域
IXYS 整流二极管局域网
页数 文件大小 规格书
2页 49K
描述
Rectifier Diode Avalanche Diode

DS9-12F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-4
包装说明:DO-4, 1 PIN针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:1
最高工作温度:180 °C最大输出电流:11 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DS9-12F 数据手册

 浏览型号DS9-12F的Datasheet PDF文件第2页 
DS 9  
DSA 9  
VRRM = 800-1800 V  
IF(RMS) = 18 A  
IF(AV)M = 11 A  
Rectifier Diode  
Avalanche Diode  
DO-203 AA  
VRSM  
V
V(BR)min VRRM  
Standard  
Types  
Avalanche  
Types  
A
C
C
V
V
900  
800  
1200  
1600  
1800  
DS9-08F  
DS9-12F  
1300  
1700  
1900  
1300  
1750  
1950  
DSA9-12F  
DSA9-16F  
DSA9-18F  
A
M5  
Only for Avalanche Diodes  
A = Anode C = Cathode  
Symbol  
Test Conditions  
TVJ = TVJM  
Tcase = 150°C; 180° sine  
Maximum Ratings  
Features  
International standard package,  
IF(RMS)  
IF(AVM)  
18  
11  
A
A
JEDEC DO-203 AA  
Planar glassivated chips  
PRSM  
IFSM  
DSA types, TVJ = TVJM, tp = 10 ms  
4.5  
kW  
Applications  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
250  
265  
A
A
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
220  
A
A
Battery DC power supplies  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
310  
295  
A2s  
A2s  
A2s  
A2s  
Advantages  
Space and weight savings  
Simple mounting  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
190  
Improved temperature and power  
cycling  
Reduced protection circuits  
TVJ  
TVJM  
Tstg  
-40...+180  
180  
-40...+180  
°C  
°C  
°C  
Md  
Mounting torque  
2.2-2.8  
19-25  
5
Nm  
lb.in.  
g
Weight  
Dimensions in mm (1 mm = 0.0394")  
Symbol  
Test Conditions  
Characteristic Values  
IR  
TVJ = TVJM; VR = VRRM  
IF = 36 A; TVJ = 25°C  
£
£
3
mA  
V
VF  
1.4  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.85  
15  
V
mW  
RthJC  
RthJH  
DC current  
180° sine  
DC current  
2.0  
2.17  
3.0  
K/W  
K/W  
K/W  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Max. allowable acceleration  
2.0  
2.0  
100  
mm  
mm  
m/s2  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
1 - 2  
© 2000 IXYS All rights reserved  

DS9-12F 替代型号

型号 品牌 替代类型 描述 数据表
DSA9-12F IXYS

完全替代

Rectifier Diode Avalanche Diode

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