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DS1073M-80 PDF预览

DS1073M-80

更新时间: 2024-01-10 15:28:51
品牌 Logo 应用领域
达拉斯 - DALLAS /
页数 文件大小 规格书
18页 261K
描述
3V EconOscillator/Divider

DS1073M-80 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknown风险等级:5.68
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.375 mm湿度敏感等级:NOT SPECIFIED
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):245
认证状态:COMMERCIAL座面最大高度:4.572 mm
最大供电电压:3.6 V最小供电电压:2.7 V
标称供电电压:3 V表面贴装:NO
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmuPs/uCs/外围集成电路类型:MICROPROCESSOR CIRCUIT
Base Number Matches:1

DS1073M-80 数据手册

 浏览型号DS1073M-80的Datasheet PDF文件第12页浏览型号DS1073M-80的Datasheet PDF文件第13页浏览型号DS1073M-80的Datasheet PDF文件第14页浏览型号DS1073M-80的Datasheet PDF文件第15页浏览型号DS1073M-80的Datasheet PDF文件第16页浏览型号DS1073M-80的Datasheet PDF文件第17页 
DS1073  
AC ELECTRICAL CHARACTERISTICS  
(TA = -40°C to +85°C) (VCC = 2.7V – 3.6V)  
PARAMETER  
Output Frequency  
Accuracy  
SYMBOL CONDITION MIN TYP MAX UNITS NOTES  
VCC = 3.15V,  
fO  
-0.5  
0
+0.5  
%
TA = 25LC  
Over temp and  
voltage  
Combined Frequency  
Variation  
-2.5%  
-0.5  
2.5%  
%
fO’  
fO”  
Long Term Stability  
+0.5  
50  
%
MHz  
1
2
External clock  
Crystal  
Maximum Input  
Frequency  
fOSCIN  
25  
MHz  
kHz  
ms  
reference  
Minimum Output  
Frequency  
fOUT  
tPOR  
29.3  
3
+
Power-Up Time  
0.1  
1
4, 5  
tSTAB  
tSTAB  
tSTAB  
tPDN  
0.1  
0.1  
1
1
1
1
ms  
ms  
ms  
ms  
5
5, 6  
Enable OUT from PDN ↑  
Enable OUT0 from PDN ↑  
I/O Hi-Z from PDN ↓  
tPDN  
OUT0 Hi-Z from PDN ↓  
Load Capacitance  
(I/O, OUT0)  
Output Duty Cycle  
I/O  
CL  
15  
pF  
7
8
40  
40  
60  
60  
%
%
OUT0  
Jitter  
J
100  
pS  
NOTES:  
1. Additive to fO’.  
2. This is the maximum frequency which can be applied to OSCIN, or the maximum crystal frequency  
that can be used. If a crystal is used, it must be operated in fundamental mode.  
3. The values of M, N and the frequency of OSCIN (if used) must be chosen so that this spec is met.  
4. This is the time from when VCC is applied until the output starts oscillating.  
5. When the device is initially powered up or restored from the power-down mode, OE should be  
asserted (high). Otherwise the start of the tstab interval will be delayed until OE goes high. OE can  
subsequently be returned to a low level during the tstab interval to force out low after the tstab interval.  
If the external mode is selected, tstab will be a function of the OSCIN period, i.e., external clock  
frequency. See “Calculated Parameters” to determine the value of tstab in this case.  
6. Although OE does not normally affect OUT0 operation, if OE is held low during power-up, the start  
of the tstab period will be delayed until OE is asserted. If OE remains low, OUT0 will not start.  
7. Operation with higher capacitive loads is possible but may impair output voltage swing and maximum  
operation frequency.  
8. Parameter given is a typical max.  
18 of 18  

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