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DRA9143Y0L PDF预览

DRA9143Y0L

更新时间： 2024-11-21 19:55:07
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 455K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN

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DRA9143Y0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：7.97Samacsys Description：DRA9143Y0L, Digital Transistor, PNP -100 mA -50 V 4.7 kΩ, Ratio Of 0.21, 3-Pin SSMini3 F3 B
其他特性：BUILT IN BIAS RESISTOR RATIO IS 4.68最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DRA9143Y0L 数据手册

 浏览型号DRA9143Y0L的Datasheet PDF文件第2页浏览型号DRA9143Y0L的Datasheet PDF文件第3页浏览型号DRA9143Y0L的Datasheet PDF文件第4页 
Doc No. TT4-EA-12488  
Revision. 2  
Transistors with Built-in Resistor  
DRA9143Y0L  
DRA9143Y0L  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
1.6  
Complementary to DRC9143Y  
DRA5143Y in SSMini3 type package  
0.26  
0.13  
3
Features  
High forward current transfer ratio hFE  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
Marking Symbol:  
Packaging  
L7  
0.7  
(0.5)(0.5)  
1.0  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SSMini3-F3-B  
SC-89  
Absolute Maximum Ratings Ta = 25 C  
Code  
SOT-490  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Total power dissipation  
Junction temperature  
Symbol  
VCBO  
VCEO  
IC  
PT  
Tj  
Topr  
Tstg  
Rating  
-50  
-50  
-100  
125  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
R1  
B
150  
-40 to +85  
-55 to +150  
R2  
Operating ambient temperature  
Storage temperature  
°C  
°C  
E
k  
k  
Resistance R1  
R2  
4.7  
22  
value  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
Conditions  
Min Typ Max  
-50  
-50  
Unit  
V
V
μA  
μA  
mA  
-
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
ICEO  
IEBO  
hFE  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-0.4  
VCE = -10 V, IC = -5 mA  
60  
200  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
-0.25  
V
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
-1.2  
V
V
Input voltage  
-0.5  
Input resistance  
Resistance ratio  
R1  
R1/R2  
-30% 4.7 +30%  
0.17 0.21 0.27  
k  
-
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2010-03-26  
Revised : 2014-02-27  
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