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DNLS320E-13 PDF预览

DNLS320E-13

更新时间: 2024-11-21 09:54:31
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 154K
描述
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DNLS320E-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.7
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):150JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

DNLS320E-13 数据手册

 浏览型号DNLS320E-13的Datasheet PDF文件第2页浏览型号DNLS320E-13的Datasheet PDF文件第3页浏览型号DNLS320E-13的Datasheet PDF文件第4页 
DNLS320E  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Epitaxial Planar Die Construction  
3
2
1
Low Collector-Emitter Saturation Resistance RCE(SAT) = 80mΩ at 3A  
High DC Current Gain hFE > 400 at IC = 2A  
Complementary PNP Type Available (DPLS325E)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
COLLECTOR  
2,4  
3 E  
Mechanical Data  
2 C  
1 B  
C 4  
1
BASE  
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
3
EMITTER  
TOP VIEW  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Schematic and Pin Configuration  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.112 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
20  
20  
5
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
3
A
8
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation @TA = 25°C (Note 3)  
PD  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31326 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DNLS320E  
© Diodes Incorporated  

DNLS320E-13 替代型号

型号 品牌 替代类型 描述 数据表
FZT689BTA DIODES

类似代替

Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4

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