5秒后页面跳转
DNLS350E PDF预览

DNLS350E

更新时间: 2024-11-21 12:50:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
5页 128K
描述
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DNLS350E 数据手册

 浏览型号DNLS350E的Datasheet PDF文件第2页浏览型号DNLS350E的Datasheet PDF文件第3页浏览型号DNLS350E的Datasheet PDF文件第4页浏览型号DNLS350E的Datasheet PDF文件第5页 
DNLS350E  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT-223  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.115 grams (approximate)  
Complementary PNP Type Available (DPLS350E)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
TOR  
LEC  
COL  
2,4  
3 E  
2 C  
1 B  
C 4  
1
BAS  
E
3
EMITTE  
R
Pin Out Configuration  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
Unit  
V
60  
50  
6
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Peak Pulse Collector Current  
Continuous Collector Current  
Peak Pulse Base Current  
5
A
3
A
IC  
1
A
IBM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
125  
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
°C/W  
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Power Dissipation (Note 4) @ TA = 25°C  
JA  
2
PD  
Rθ  
62.5  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Device mounted on FR-4 PCB with 1inch2 copper pad layout.  
1 of 5  
www.diodes.com  
April 2009  
© Diodes Incorporated  
DNLS350E  
Document number: DS31231 Rev. 3 - 2  

与DNLS350E相关器件

型号 品牌 获取价格 描述 数据表
DNLS350E-13 DIODES

获取价格

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DNLS350Y DIODES

获取价格

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DNLS350Y-13 DIODES

获取价格

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DNLS412E DIODES

获取价格

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DNLS412E-13 DIODES

获取价格

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
DNM04S0A0R06NFB DELTA

获取价格

Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
DNM04S0A0R06NFD DELTA

获取价格

Delphi DNS, Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
DNM04S0A0R06PFB DELTA

获取价格

Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
DNM04S0A0R06PFD DELTA

获取价格

Delphi DNS, Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
DNM04S0A0R10NFA DELTA

获取价格

Delphi DNM, Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/10A out