Datasheet > DMT32M5LPS

DMT32M5LPS

更新时间： 2023-12-06 20:11:33

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	664K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMT32M5LPS 数据手册

DMT32M5LPS

0.004

0.003

0.002

0.001

1.8

1.6

1.4

1.2

V_GS= 4.5V, I_D= 30A

I_D= 1mA

I_D= 250µA

0.8

0.6

0.4

0.2

V_GS= 10V, I_D= 30A

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

V_GS= 0V

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

1000

100

f = 1MHz

C_iss

C_oss

T_J= 150^oC

T_J= 125^oC

C_rss

T_J= 25^oC

T_J= 85^oC

T_J= -55^oC

0.3

0.6

0.9

1.2

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

1000

100

P_W= 1µs

R_DS(ON)

Limited

P_W= 1s

P_W= 100ms

P_W= 10ms

P_W= 1ms

P_W= 100µs

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

V_DS= 15V, I_D= 20A

P_W= 10µs

V_GS= 10V

0.1

Q_g(nC)

Figure 11. Gate Charge

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

5 of 9

www.diodes.com

May 2023

DMT32M5LPS

Document number: DS39663 Rev. 4 - 2

1 2 3 456 7 8 9

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