是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-F5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 22 weeks |
风险等级: | 5.72 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 534 pF | JESD-30 代码: | S-PDSO-F5 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 1.98 W |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMT35M8LDG | DIODES |
获取价格 |
Asymmetric Dual N-Channel MOSFET | |
DMT3-695-2.4 | COILCRAFT |
获取价格 |
General Purpose Inductor, 695uH, 1 Element, 70, DIP-3 | |
DMT3-695-2.4L | COILCRAFT |
获取价格 |
General Purpose Inductor, 695uH, 1 Element, ROHS COMPLIANT | |
DMT36M1LPS | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMT36M1LPS-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Me | |
DMT3-77-8 | COILCRAFT |
获取价格 |
General Purpose Inductor, 77uH, 1 Element, 70, DIP-3 | |
DMT3-77-8.0 | COILCRAFT |
获取价格 |
General Purpose Inductor, 77uH, 1 Element | |
DMT3-77-8L | COILCRAFT |
获取价格 |
General Purpose Inductor, 77uH, 1 Element, ROHS COMPLIANT | |
DMT3N4R2U224M3DTA0 | MURATA |
获取价格 |
Operating Temperature Range | |
DMT4002LPS | DIODES |
获取价格 |
40V N-CHANNEL ENHANCEMENT MODE MOSFET |