Datasheet > DMT32M5LPS

DMT32M5LPS

更新时间： 2023-12-06 20:11:33

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	664K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMT32M5LPS 数据手册

DMT32M5LPS

Maximum Ratings (@T_C= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

V_GSS

Steady

State

T_C= +25C

T_C= +70C

150

120

Continuous Drain Current, V_GS= 10V (Note 6)

I_D

Maximum Continuous Body Diode Forward Current (Note 6)

350

I_S

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

I_DM

I_SM

I_AS

E_AS

Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 0.1mH

Avalanche Energy, L = 0.1mH

140

Thermal Characteristics (@T_C= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

3.2

Unit

Total Power Dissipation (Note 5)

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_JA

100

1.5

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

°C/W

R_JC

-55 to +150

°C

T_J,T_STG

Electrical Characteristics (@T_C= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 24V, V_GS= 0V

V_GS= ±16V, V_DS= 0V

μA

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

—

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 1mA

V_GS= 10V, I_D= 30A

V_GS= 4.5V, I_D= 30A

V_GS= 0V, I_S= 30A

—

1.6

2.3

0.8

2.0

3.0

1.1

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

3944

1267

186

0.6

—

C_iss

C_oss

C_rss

R_g

V_DS= 25V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 10V)

Gate-Source Charge

Q_g

V_DS= 15V, I_D= 20A

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

7.2

Turn-On Rise Time

13.2

37.5

23.9

28.7

45.8

V_DD= 15V, V_GS= 10V,

I_D= 15A, R_G= 3Ω

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_RR

I_S= 15A, di/dt = 500A/μs

Q_RR

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

3 of 9

www.diodes.com

May 2023

DMT32M5LPS

Document number: DS39663 Rev. 4 - 2

1 234 5 6 7...9

中文翻译

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