5秒后页面跳转
DMT10H009SSS PDF预览

DMT10H009SSS

更新时间: 2024-11-06 14:54:03
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 358K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

DMT10H009SSS 数据手册

 浏览型号DMT10H009SSS的Datasheet PDF文件第2页浏览型号DMT10H009SSS的Datasheet PDF文件第3页浏览型号DMT10H009SSS的Datasheet PDF文件第4页浏览型号DMT10H009SSS的Datasheet PDF文件第5页浏览型号DMT10H009SSS的Datasheet PDF文件第6页浏览型号DMT10H009SSS的Datasheet PDF文件第7页 
DMT10H009SSS  
100V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
High Conversion Efficiency  
I
D Max  
BVDSS  
RDS(ON) Max  
9.2mΩ @ VGS = 10V  
Low RDS(ON)—Minimizes On-State Losses  
Low Input Capacitance  
TA = +25°C  
100V  
12A  
Fast Switching Speed  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Description and Applications  
Mechanical Data  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)) yet maintain superior switching performance, making it ideal  
for high-efficiency power management applications.  
Case: SO-8  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Finish—Matte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.074 grams (Approximate)  
High Frequency Switching  
Synchronous Rectification  
DC-DC Converters  
SO-8  
S
S
S
G
D
D
D
D
Top View  
Internal Schematic  
Top View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
Case  
Packaging  
DMT10H009SSS-13  
SO-8  
2500/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and  
Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
8
5
= Manufacturer’s Marking  
T10H09SS = Product Type Marking Code  
YYWW = Date Code Marking  
YY or YY = Year (ex: 18 = 2018)  
WW = Week (01 to 53)  
T10H09SS  
YY WW  
1
4
1 of 7  
www.diodes.com  
September 2018  
© Diodes Incorporated  
DMT10H009SSS  
Document number: DS41257 Rev. 2 - 2  
Equivalent Circuit  

与DMT10H009SSS相关器件

型号 品牌 获取价格 描述 数据表
DMT10H010L HOTTECH

获取价格

SOP-8
DMT10H010LCT DIODES

获取价格

Power Field-Effect Transistor, 62A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Me
DMT10H010LK3 DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LPS DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LSS DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LSS_18 DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LSS-13 DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LSSQ DIODES

获取价格

100V N-Channel Enhancement Mode MOSFET
DMT10H010SPS DIODES

获取价格

100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H014L HOTTECH

获取价格

SOP-8