DMT10H015L
HIGH VOLTAGE MOSFET (N-CHANNEL)
FEATURES
Ultra low on-resistance:VDS=100V,ID=8.3A,RDS(ON)≤16mΩ@VGS=10V
Low Input Capacitance and Fast Switching Speed
High Conversion Efficiency
For Back-lighting,DC-DC Converters and Power Management Functions
Surface Mount device
SOP-8
MECHANICAL DATA
Case: SOP-8
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.3 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
TA = 25°C
Continuous drain current(2),VGS = 10V
TA = 70°C
Symbol
Value
Unit
V
V
DS
100
±20
8.3
VGS
V
A
ID
6.7
A
Pulsed drain current(10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (2)
Avalanche current(4), L=0.3mH
Avalanche energy(4), L=0.3mH
Power dissipation(1)
IDM
IS
IAS
EAS
PD
54
A
3
A
7.5
A
85
mJ
W
1.2
Thermal resistance from Junction to ambient (1)
Power dissipation(2)
Thermal resistance from Junction to ambient (2)
Thermal resistance from Junction to case (2)
Operating and Storage temperature
Rθ
PD
Rθ
Rθ
TJ,TSTG
JA
100
1.67
75
°C/W
W
JA
°C/W
°C/W
°C
JC
12
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min
V(BR)DSS 100
IDSS
Typ
Max
Unit
V
μA
nA
V
Conditions
VGS=0V, ID=1mA
Drain-Source breakdown voltage(3)
Zero gate voltage drain current(3)
Gate-body leakage current(3)
Gate-threshold voltage (3)
VDS=80V,
1
±100
3
VGS=0V
VDS=0V,
IGSS
VGS=±20V
VGS(th)
1.4
2
VDS=VGS, ID=250μA
14
15
17
16
18
25
mΩ VGS=10V, ID=20A
mΩ VGS=6V, ID=20A
mΩ VGS=4.5V, ID=5A
Drain-source on-resistance (3)
RDS(ON)
IS=20A, VGS=0V
Diode forward voltage (3)
Input capacitance(4)
Output capacitance(4)
Reverse transfer capacitance(4)
Gate resistance(4)
Total gate charge(4)
Gate-source charge(4)
Gate-drain charge(4)
Turn-on delay time(4)
Turn-on rise time(4)
Turn-off delay time(4)
Turn-off fall time(4)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
0.9
1.3
V
1871
261
6.9
0.75
33.3
6.9
5.1
6.5
7.0
19.7
8.1
pF
pF
pF
Ω
nC
nC
nC
nS
nS
nS
nS
nS
nC
VDS=50V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
VDD=50V,VGS=10V,ID=10A
VDD=50V, VGS=10V
ID=10A,Rg=6Ω
td(off)
tf
trr
Body Diode Reverse Recovery Time(4)
Body Diode Reverse Recovery Charge(4)
37.9
51.9
IF=10A, dI/dt=100A/ s
μ
Qrr
Notes: 1. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
2. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
3. Short duration pulse test used to minimize self-heating effect.
4. Guaranteed by design. Not subject to product testing.
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