Datasheet > DMT10H015L

DMT10H015L

更新时间： 2024-11-09 18:09:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	618K
描述
SOP-8

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数据手册

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DMT10H015L 数据手册

DMT10H015L

HIGH VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=100V,I_D=8.3A,R_DS(ON)≤16mΩ@V_GS=10V

 Low Input Capacitance and Fast Switching Speed

 High Conversion Efficiency

 For Back-lighting,DC-DC Converters and Power Management Functions

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

T_A= 25°C

Continuous drain current(2),VGS = 10V

T_A= 70°C

Symbol

Value

Unit

100

±20

8.3

V_GS

I_D

6.7

Pulsed drain current(10μs Pulse, Duty Cycle = 1%)

Maximum Continuous Body Diode Forward Current (2)

Avalanche current(4), L=0.3mH

Avalanche energy(4), L=0.3mH

Power dissipation(1)

I_DM

I_S

I_AS

E_AS

P_D

7.5

1.2

Thermal resistance from Junction to ambient (1)

Power dissipation(2)

Thermal resistance from Junction to ambient (2)

Thermal resistance from Junction to case (2)

Operating and Storage temperature

R_θ

P_D

R_θ

T_J,T_STG

100

1.67

°C/W

°C

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min

V(BR)DSS 100

I_DSS

Typ

Max

Unit

μA

Conditions

VGS=0V, ID=1mA

Drain-Source breakdown voltage(3)

Zero gate voltage drain current(3)

Gate-body leakage current(3)

Gate-threshold voltage (3)

V_DS=80V,

±100

VGS=0V

V_DS=0V,

I_GSS

V^GS=±20V

V_GS(th)

1.4

VDS=VGS, ID=250μA

mΩ VGS=10V, ID=20A

mΩ V^GS=6V, I^D=20A

mΩ VGS=4.5V, ID=5A

Drain-source on-resistance (3)

R_DS(ON)

IS=20A, VGS=0V

Diode forward voltage (3)

Input capacitance(4)

Output capacitance(4)

Reverse transfer capacitance(4)

Gate resistance(4)

Total gate charge(4)

Gate-source charge(4)

Gate-drain charge(4)

Turn-on delay time(4)

Turn-on rise time(4)

Turn-off delay time(4)

Turn-off fall time(4)

V_SD

C_iss

C_oss

C_rss

R_g

Q_g

Q_gs

Q_gd

t_d(on)

t_r

0.9

1.3

1871

261

6.9

0.75

33.3

6.9

5.1

6.5

7.0

19.7

8.1

V_{DS=50V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

V^DD=50V,V^GS=10V,I^D=10A

VDD=50V, VGS=10V

ID=10A,R^g=6Ω

t_d(off)

t_f

t_rr

Body Diode Reverse Recovery Time(4)

Body Diode Reverse Recovery Charge(4)

37.9

51.9

I^F=10A, dI/dt=100A/ s

Q_rr

Notes: 1. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

2. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

3. Short duration pulse test used to minimize self-heating effect.

4. Guaranteed by design. Not subject to product testing.

1 / 6

E-mail:hkt@heketai.com

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