Datasheet > DMP3096LQ

DMP3096LQ

更新时间： 2023-12-06 20:10:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	526K
描述
P-Channel Enhancement Mode MOSFET

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数据手册

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DMP3096LQ 数据手册

DMP3096LQ

0.14

0.12

0.1

2.5

V_GS= 4.5V, I_D= 3.0A

I_D= 1mA

0.08

0.06

0.04

0.02

1.5

I_D= 250μA

V_GS= 10V, I_D= 3.8A

0.5

-50 -25

100 125 150

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction Temperature

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

1000

100

V_GS= 0V

f = 1MHz

C_iss

T_J= 150℃

T_J= 125℃

C_oss

C_rss

T_J= 85℃

T_J= 25℃

T_J= -55℃

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

100

R_DS(ON)

Limited

Pw = 100μs

Pw = 1ms

V_DS= 15V, I_D= 3.8A

T_J(Max)= 150℃

T_A= 25℃

Pw = 10ms

0.1

0.01

Pw = 100ms

Single Pulse

DUT on 1*MRP

Board

Pw = 1s

Pw = 10s

V_GS= 10V

0.1

100

Q_g(nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

4 of 7

www.diodes.com

November 2022

DMP3096LQ

Document number: DS44770 Rev. 4 - 2

1 2 345 6 7

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