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DMP3096LQ PDF预览

DMP3096LQ

更新时间： 2023-12-06 20:10:51
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美台 - DIODES /
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P-Channel Enhancement Mode MOSFET

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DMP3096LQ 数据手册

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DMP3096LQ  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
Steady  
State  
-3.4  
-2.7  
TA = +25°C  
TA = +70°C  
A
Continuous Drain Current (Note 6) VGS = -10V  
ID  
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)  
-22  
A
IDM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Power Dissipation (Note 5)  
Symbol  
PD  
Value  
0.8  
Unit  
W
158  
1.2  
°C/W  
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)  
Power Dissipation (Note 6)  
RθJA  
PD  
100  
°C/W  
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)  
Operating and Storage Temperature Range  
RθJA  
-55 to +150  
°C  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-30  
V
BVDSS  
IDSS  
VGS = 0V, ID = -250μA  
VDS = -30V, VGS = 0V  
VGS = 20V, VDS = 0V  
-800  
100  
nA  
nA  
IGSS  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
-1.0  
-2.1  
V
mΩ  
V
VGS(TH)  
RDS(ON)  
VSD  
VDS = VGS, ID = -250μA  
VGS = -10V, ID = -3.8A  
VGS = -4.5V, ID = -3.0A  
VGS = 0V, IS = -2.7A  
70  
130  
48  
83  
Static Drain-Source On-Resistance  
Diode Forward Voltage  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
-0.8  
-1.26  
366  
51  
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
RG  
  
  
  
  
Output Capacitance  
VDS = -25V, VGS = 0V, f = 1.0MHz  
VGS = 0V, VDS = 0V, f = 1MHz  
Reverse Transfer Capacitance  
Gate Resistance  
39  
9.2  
3.8  
7.5  
1.0  
1.1  
3.2  
8.2  
21.7  
13.1  
  
  
  
  
  
  
  
  
  
Total Gate Charge (VGS = -4.5V)  
Total Gate Charge (VGS = -10V)  
Gate-Source Charge  
Qg  
Qg  
nC  
ns  
VDS = -15V, ID = -3.8A  
Qgs  
Qgd  
td(on)  
tr  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
VDS = -15V, VGS = -10V,  
ID = -1A, RG = 6.0Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
Notes:  
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to production testing.  
2 of 7  
www.diodes.com  
November 2022  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
DMP3096LQ  
Document number: DS44770 Rev. 4 - 2  
1234567

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