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DMP3025LK3-13 PDF预览

DMP3025LK3-13

更新时间: 2024-01-10 10:45:37
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 673K
描述
30V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3025LK3-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:GREEN, PLASTIC, TO-252, 3 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):16.1 A
最大漏极电流 (ID):10.6 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):10 W最大脉冲漏极电流 (IDM):41.9 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMP3025LK3-13 数据手册

 浏览型号DMP3025LK3-13的Datasheet PDF文件第2页浏览型号DMP3025LK3-13的Datasheet PDF文件第3页浏览型号DMP3025LK3-13的Datasheet PDF文件第4页浏览型号DMP3025LK3-13的Datasheet PDF文件第5页浏览型号DMP3025LK3-13的Datasheet PDF文件第6页浏览型号DMP3025LK3-13的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
DMP3025LK3  
Suggested Pad Layout  
6.2  
3.0  
0.244  
0.118  
5.8  
0.228  
1.6  
6.17  
0.063 0.243  
mm  
inches  
2.58  
0.101  
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Copyright © 2009, Diodes Incorporated  
www.diodes.com  
8 of 8  
www.diodes.com  
July 2009  
© Diodes Incorporated  
DMP3025LK3  
Document Revision: 1  

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