Datasheet > DMP3030SN

DMP3030SN

更新时间： 2022-05-21 05:13:20

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
1页	142K
描述
Low On-Resistance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2)

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DMP3030SN 数据手册

Product specification

DMP3030SN

Features

Mechanical Data

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Gate

"Green" Device (Note 4)

•

Case: SC59

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.014 grams (approximate)

•

Qualified to AEC-Q101 standards for High Reliability

Drain

SC59

Gate

ESD protected

TOP VIEW

Gate

Protection

Diode

Source

Internal Schematic

EQUIVALENT CIRCUIT

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

-30

±20

-0.7

-2.8

V_DSS

V_GSS

I_D

Gate-Source Voltage

Drain Current (Note 1) Steady State

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics ^@T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

500

Unit

°C/W

°C

P_d

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

250

R_θ

-65 to +150

T_j, T_STG

Electrical Characteristics ^@T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

-30

⎯

BV_DSS

I_DSS

⎯

-10

V_GS= 0V, I_D= -250µA

μA V_DS= -30V, V_GS= 0V

μA V_GS= ±20V, V_DS= 0V

I_GSS

±10

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1.0

-3.0

V_GS(th)

⎯

0.20

0.35

V_DS= -10V, I_D= -1.0mA

V_GS= -10V, I_D= -0.4A

V_GS= -4.5V, I_D= -0.4A

V_DS= -10V, I_D= -0.4A

V_GS= 0V, I_S= -0.7A

0.25

0.45

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

|Y_fs|

V_SD

⎯

-1.1

-0.8

160

120

C_iss

C_oss

C_rss

⎯

V_DS= -10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

⎯

Turn-Off Delay Time

t_D(OFF)

V_DD= -10V, I_D= -0.4A,

V_GS= -5.0V, R_GEN= 50Ω

Turn-On Rise Time

t_r

t_f

Turn-Off Fall Time

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

http://www.twtysemi.com

sales@twtysemi.com

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与DMP3030SN相关器件

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