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DMP21D0UFB4-7B PDF预览

DMP21D0UFB4-7B

更新时间: 2024-09-17 12:50:11
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关
页数 文件大小 规格书
6页 155K
描述
20V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP21D0UFB4-7B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:GREEN, PLASTIC, DFN1006H4-3, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.6
Is Samacsys:N其他特性:HIGH RELIABILITY, LOW THRESHOLD
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.17 A
最大漏极电流 (ID):0.86 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PBCC-N3
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.99 W
认证状态:Not Qualified参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMP21D0UFB4-7B 数据手册

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A Product Line of  
Diodes Incorporated  
DMP21D0UFB4  
20V P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Footprint of just 0.6mm2 – thirteen times smaller than SOT23  
0.4mm profile – ideal for low profile applications  
Low Gate Threshold Voltage  
V(BR)DSS  
RDS(on)  
ID @ TA = 25°C  
-0.77A  
495mΩ @ VGS = -4.5V  
690mΩ @ VGS = -2.5V  
960mΩ @ VGS = -1.8V  
Fast Switching Speed  
-20V  
-0.67A  
“Lead Free”, RoHS Compliant (Note 1)  
Halogen and Antimony Free. "Green" Device (Note 2)  
ESD Protected Gate 3KV  
-0.57A  
Qualified to AEC-Q101 Standards for High Reliability  
Mechanical Data  
Description and Applications  
This MOSFET has been designed to minimize the on-state resistance  
(RDS(on)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Case: DFN1006H4-3  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper leadframe. Solderable  
per MIL-STD-202, Method 208  
Portable electronics  
Weight: 0.001 grams (approximate)  
Drain  
DFN1006H4-3  
Gate  
S
D
G
Gate  
Protection  
Diode  
Source  
Top View  
Internal Schematic  
Bottom View  
ESD PROTECTED TO 3kV  
Equivalent Circuit  
Ordering Information (Note 3)  
Part Number  
DMP21D0UFB4-7B  
Marking  
NO  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
10,000  
7
8
Notes:  
1. No purposefully added lead  
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.  
3. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
DMP21D0UFB4-7B  
NO = Product Type Marking Code  
NO  
Top View  
Bar Denotes Gate  
and Source Side  
1 of 6  
www.diodes.com  
June 2011  
© Diodes Incorporated  
DMP21D0UFB4  
Datasheet number: DS35279 Rev. 2 - 2  

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