Datasheet > DMP2215L

DMP2215L

更新时间： 2024-02-27 17:34:41

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	138K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMP2215L 数据手册

DMP2215L

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT-23

R_DS(ON)< 100mΩ @ V_GS= -4.5V, I_D= -2.7A

R_DS(ON)< 215mΩ @ V_GS= -2.5V, I_D= -2.0A

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

SOT-23

Drain

Gate

Source

EQUIVALENT CIRCUIT

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-20

Units

Gate-Source Voltage

±12

V_GSS

_A= 25°C

Drain Current (Note 1)

Steady

State

-2.7

-2

I_D

T_A= 70°C

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

1.08

115

Units

P_D

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

°C

T_J,T_STG

Notes:

1. Device mounted on FR-4 PCB. t ≤5 sec.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 5

www.diodes.com

July 2009

DMP2215L

Document number: DS31125 Rev. 7 - 2

12 3 4 5

中文翻译

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