是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 1.63 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 4.3 A | 最大漏极电流 (ID): | 4.3 A |
最大漏源导通电阻: | 0.038 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.3 W |
参考标准: | AEC-Q101 | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMP2101UCP9 | DIODES |
获取价格 |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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DMP2104LP | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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DMP2104V | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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DMP2104V_0711 | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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DMP2104V-7 | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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DMP2109UVT | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET |
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DMP2109UVT-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, |
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DMP2109UVTQ | DIODES |
获取价格 |
P-Channel Enhancement Mode MOSFET |
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DMP210DUDJ | DIODES |
获取价格 |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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DMP210DUDJ-7 | DIODES |
获取价格 |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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