Datasheet > DMP2123L

DMP2123L

更新时间： 2024-09-25 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	164K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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DMP2123L 数据手册

DMP2123L

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Case: SOT-23

•

Low R_DS(ON)

Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram Below

Marking Information: See Page 4

Ordering Information: See page 4

Weight: 0.008 grams (approximate)

•

72 mΩ @V_GS= -4.5V

108 mΩ @V_GS= -2.7V

123 mΩ @V_GS= -2.5V

•

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

"Green" Device (Note 4)

•

SOT-23

Drain

Gate

Source

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-20

Unit

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1) Continuous

T_A= 25°C

_A= 70°C

-3.0

-2.4

I_D

Pulsed Drain Current (Note 2)

-15

2.0

I_DM

I_S

Body-Diode Continuous Current (Note 1)

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

1.4

P_D

Thermal Resistance, Junction to Ambient (Note 1); Steady-State

Operating and Storage Temperature Range

°C/W

°C

R_θ

-55 to +150

T_J, T_STG

Notes:

1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 4

www.diodes.com

May 2008

DMP2123L

Document number: DS31440 Rev. 1 - 2

12 3 4

中文翻译

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