5秒后页面跳转
DMP2160UFDB-7 PDF预览

DMP2160UFDB-7

更新时间: 2024-09-26 09:54:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 142K
描述
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

DMP2160UFDB-7 数据手册

 浏览型号DMP2160UFDB-7的Datasheet PDF文件第2页浏览型号DMP2160UFDB-7的Datasheet PDF文件第3页浏览型号DMP2160UFDB-7的Datasheet PDF文件第4页浏览型号DMP2160UFDB-7的Datasheet PDF文件第5页浏览型号DMP2160UFDB-7的Datasheet PDF文件第6页 
DMP2160UFDB  
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low On-Resistance  
Case: DFN2020B-6  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish – NiPdAu annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.0065 grams (approximate)  
70mΩ @VGS = -4.5V  
85mΩ @VGS = -2.5V  
86mΩ (typ) @VGS = -1.8V  
Low Gate Threshold Voltage, -0.9V Max  
Fast Switching Speed  
Low Input/Output Leakage  
Low Profile, 0.5mm Max Height  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
DFN2020B-6  
D
G
S
3
2
1
4
5
6
S
G
D
BOTTOM VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
1.4  
89  
Unit  
W
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
-20  
Units  
V
V
A
A
Gate-Source Voltage  
±12  
-3.8  
-13  
Drain Current (Note 1)  
Pulsed Drain Current (Note 4)  
IDM  
Notes:  
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Repetitive rating, pulse width limited by junction temperature.  
1 of 6  
www.diodes.com  
September 2009  
© Diodes Incorporated  
DMP2160UFDB  
Document number: DS31643 Rev. 4 - 2  

DMP2160UFDB-7 替代型号

型号 品牌 替代类型 描述 数据表
DMP2130LDM-7 DIODES

功能相似

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

与DMP2160UFDB-7相关器件

型号 品牌 获取价格 描述 数据表
DMP2160UFDBQ-7 DIODES

获取价格

Power Field-Effect Transistor,
DMP2160UW DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2160UW TYSEMI

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMP2160UW-7 DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2160UWQ DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2165UW DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2170U DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2170U-13 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMP2170U-7 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMP21D0UFB DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET