DMN1054UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
Features
Trench-CSP Technology with the Lowest on Resistance:
VDSS
RDS(ON)
Qg
Qgd
ID
.
RDS(ON) = 35mΩ to Minimize On-State Losses
.
Qg = 9.6nC for Ultra-Fast Switching
8V
35mΩ
9.6nC
0.9nC
4.0A
VGS(TH) = 0.6V Typ. for a Low Turn-On Potential
CSP with Footprint 0.8mm × 0.8mm
Description
Height = 0.375mm for Low Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize
on-state losses and switch ultra-fast, making it ideal for high-efficiency
power transfer. Using Chip-Scale Package (CSP) to increase power
density by combining low thermal impedance with minimal RDS(ON)
per footprint area.
Mechanical Data
Case: X1-WLB0808-4
Terminal Connections: See Diagram Below
Applications
DC-DC Converters
Battery Management
Load Switch
X1-WLB0808-4
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN1054UCB4-7
Case
X1-WLB0808-4
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2