Datasheet > DMN10H170

DMN10H170

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	596K
描述
TO-252

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DMN10H170 数据手册

DMN10H170

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=100V,R_DS(ON)≤140mΩ@V_GS=10V,I_D=12A

 Low On-Resistance and Low Input Capacitance

 For Analog Switch, Power Management Functions and DC-DC Converters

Applications

 Surface Mount device

TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

100

Unit

Gate-source voltage

V_GS

±20

TC = +25°C

Continuous drain current, VGS =10V(1)

TC= +100°C

7.5

I_D

Maximum Body Diode Forward Current (1)

Pulsed drain current (10μs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 1.43mH, TJ= +25°C

Avalanche Energy, L = 1.43mH, TJ= +25°C

I_S

IDM

I_AS

E_AS

5.3

TC= +25°C

Power dissipation(1)

TC= +100°C

R_θJA

R_θJc

TJ,TSTG

Thermal resistance from Junction to ambient (1)

Thermal Resistance, Junction to Case (1)

Operating and Storage temperature

°C/W

°C

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V^(BR)DSS

Drain-Source breakdown voltage(2)

Zero gate voltage drain current(2)

Gate-body leakage current(2)

Gate-threshold voltage (2)

100

I_DSS

I_GSS

V_GS(th)

±100

3.0

140

160

1.0

uA V_DS=100V,

nA V_DS=0V,

VGS=±20V

mΩ VGS=10V, ID=5A

mΩ VGS=4.5V, ID=5A

VGS=0V

1.0

2.0

104

0.7

1167

VDS=VGS, ID=250μA

Drain-source on-resistance (2)

R_DS(ON)

Diode forward voltage (2)

Input capacitance (3)

Output capacitance(3)

Reverse transfer capacitance(3)

Gate Resistance(3)

V_SD

C_iss

C_oss

C_rss

R_g

IS=10A, VGS=0V

V_{DS=25V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

1.3

Turn-on delay time(3)

Turn-on rise time(3)

Turn-off delay time(3)

Turn-off fall time(3)

Total Gate Charge(3)

Total gate charge(3)

Gate-source charge(3)

Gate-drain charge(3)

Body Diode Reverse Recovery Time(3)

Body Diode Reverse Recovery Charge(3)

Notes:1. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

2. Short duration pulse test used to minimize self-heating effect.

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

t_rr

10.5

11.1

42.6

12.8

4.9

9.7

2.0

30.3

35.2

VDD=50V, ID=12.8A,

Rg=25Ω

VDS=80V,VGS=4.5V,ID=12.8A

VDS=80V,VGS=10V,ID=12.8A

VGS=0V,IS=12.8A,

di/dt= 100A/μs

Q_rr

3. Guaranteed by design. Not subject to production testing.

1 / 6

E-mail:hkt@heketai.com

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与DMN10H170相关器件

型号	品牌	获取价格	描述	数据表
DMN10H170SFDE	DIODES	获取价格	Halogen and Antimony Free. âGreenâ Device
DMN10H170SFDE_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SFDE-13	DIODES	获取价格	Halogen and Antimony Free. âGreenâ Device
DMN10H170SFDE-7	DIODES	获取价格	Halogen and Antimony Free. âGreenâ Device
DMN10H170SFG	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability
DMN10H170SFG_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET POWERDIÂ®
DMN10H170SFG-13	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability
DMN10H170SFG-7	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability
DMN10H170SFGQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SK3	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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