Datasheet > DMN10H170SFG-7

DMN10H170SFG-7

更新时间： 2024-11-22 01:01:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	301K
描述
Qualified to AEC-Q101 Standards for High Reliability

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替代型号

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DMN10H170SFG-7 数据手册

DMN10H170SFG

N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI^®

Product Summary

Features

I_Dmax

T_A= +25°C



100% Unclamped Inductive Switch (UIS) test in production

V_(BR)DSS

R_DS(ON)max



Low R_DS(ON)– ensures on state losses are minimized

Small form factor thermally efficient package enables higher

density end products

122mΩ @ V_GS= 10V

133mΩ @ V_GS= 4.5V

2.9A

2.7A

100V



Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

Description



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

Applications



Case: POWERDI3333



Backlighting

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.034 grams (approximate)

Power Management Functions

DC-DC Converters



POWERDI3333

Pin 1

Top View

Equivalent Circuit

Bottom View

Ordering Information (Note 4)

Part Number

DMN10H170SFG-7

DMN10H170SFG-13

Compliance

Standard

Case

POWERDI3333

Packaging

2000/Tape & Reel

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

G17 = Product marking code

YYWW = Date code marking

YY = Last digit of year (ex: 10 for 2010)

WW = Week code (01 – 53)

G17

POWERDI is a registered trademark of Diodes Incorporated

1 of 6

www.diodes.com

August 2013

DMN10H170SFG

Document number: DS36147 Rev. 4 - 2

12 3 4 5 6

中文翻译

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DMN10H170SFG-7 替代型号

型号	品牌	替代类型	描述	数据表
DMN10H170SFG-13	DIODES	完全替代	Qualified to AEC-Q101 Standards for High Reliability

与DMN10H170SFG-7相关器件

型号	品牌	获取价格	描述	数据表
DMN10H170SFGQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SK3	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SK3-13	DIODES	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
DMN10H170SK3Q	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SVT	DIODES	获取价格	Low Gate Threshold Voltage
DMN10H170SVT_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SVT-13	DIODES	获取价格	Low Gate Threshold Voltage
DMN10H170SVT-7	DIODES	获取价格	Low Gate Threshold Voltage
DMN10H170SVTQ	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SVTQ-13	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET

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