Datasheet > DMN10H170SVT-7

DMN10H170SVT-7

更新时间： 2024-01-04 04:02:50

品牌	Logo	应用领域
美台 - DIODES		栅
页数	文件大小	规格书
6页	521K
描述
Low Gate Threshold Voltage

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数据手册
替代型号

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DMN10H170SVT-7 数据手册

DMN10H170SVT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_Dmax

T_A= +25°C



Low Gate Threshold Voltage

V_(BR)DSS

R_DS(ON)max

Low Input Capacitance

160mΩ @ V_GS= 10V

200mΩ @ V_GS= 4.5V

2.6A

2.3A

Fast Switching Speed

100V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Description

Mechanical Data

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) and yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.



Case: TSOT26

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



Applications



Power Management Functions

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

Solderable per MIL-STD-202, Method 208

Weight: 0.015 grams (Approximate)



TSOT26

Top View

Pin-Out

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN10H170SVT-7

DMN10H170SVT-13

TSOT26

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

TSOT26

11N = Product Type Marking Code

YM = Date Code Marking

Y or ꢀ = Year (ex: B = 2014)

M = Month (ex: 9 = September)

11N

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

February 2015

DMN10H170SVT

Document number: DS37196 Rev. 2 - 2

12 3 4 5 6

中文翻译

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DMN10H170SVT-7 替代型号

型号	品牌	替代类型	描述	数据表
DMN10H170SVT-13	DIODES	类似代替	Low Gate Threshold Voltage

与DMN10H170SVT-7相关器件

型号	品牌	获取价格	描述	数据表
DMN10H170SVTQ	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SVTQ-13	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H170SVTQ-7	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H220L	DIODES	获取价格	Low On-Resistance
DMN10H220L_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H220L-13	DIODES	获取价格	Low On-Resistance
DMN10H220L-7	DIODES	获取价格	Low On-Resistance
DMN10H220LDV	DIODES	获取价格	100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H220LE	DIODES	获取价格	Low On-Resistance
DMN10H220LE_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET

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