Datasheet > DMN10H100

DMN10H100

更新时间： 2024-11-19 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	1002K
描述
TO-252

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中文翻译

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DMN10H100 数据手册

DMN10H100

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=100V,R_DS(ON)≤80mΩ@V_GS=10V,I_D=18A

 Low RDS(ON) – ensures on state losses are minimized

 For Power Management Functions and DC-DC Converters Applications

 Surface Mount device

TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

TC = +25°C

Continuous drain current, VGS = 10V(1)

TC= +70°C

Symbol

V_DS

Value

Unit

100

±20

V_GS

I_D

IDM

I_AS

Pulsed drain current (380μs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 1mH

Avalanche Energy, L = 1mH

E_AS

32.6

TC= +25°C

Power dissipation(1)

TC= +70°C

R_θJA

R_θJc

TJ,TSTG

Thermal resistance from Junction to ambient (1)

Thermal Resistance, Junction to Case (1)

Operating and Storage temperature

3.3

-55 ~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS

Drain-Source breakdown voltage(2)

Zero gate voltage drain current(2)

Gate-body leakage current(2)

Gate-threshold voltage (2)

100

I_DSS

I_GSS

V_GS(th)

±100

3.0

100

uA V_DS=80V,

nA V_DS=0V,

VGS=±20V

mΩ VGS=10V, ID=3.3A

mΩ VGS=6V, ID=3A

VGS=0V

1.0

2.0

VDS=VGS, ID=250μA

Drain-source on-resistance (2)

R_DS(ON)

Diode forward voltage (2)

Input capacitance (3)

Output capacitance(3)

Reverse transfer capacitance(3)

Gate Resistance(3)

V_SD

C_iss

C_oss

C_rss

R_g

0.77

1172

40.8

31.3

1.6

IS=3.2A, VGS=0V

V_{DS=50V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

Turn-on delay time(3)

Turn-on rise time(3)

Turn-off delay time(3)

Turn-off fall time(3)

Total Gate Charge(3)

Total gate charge(3)

Gate-source charge(3)

Gate-drain charge(3)

Body Diode Reverse Recovery Time(3)

Body Diode Reverse Recovery Charge(3)

Notes:1. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

2. Short duration pulse test used to minimize self-heating effect.

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

t_rr

5.4

5.9

7.3

12.2

25.2

5.3

5.9

19.7

15.9

VDD=50V, ID=3.3A,

R^g=6.0Ω

VDS=50V,VGS=4.5V,ID=3.3A

VDD=50V,VGS=10V,ID=3.3A

IS=3.3A,di/dt= 100A/μs

Q_rr

3. Guaranteed by design. Not subject to production testing.

1 / 6

E-mail:hkt@heketai.com

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与DMN10H100相关器件

型号	品牌	获取价格	描述	数据表
DMN10H100SK3	DIODES	获取价格	Halogen and Antimony Free. âGreenâ Device
DMN10H100SK3_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H100SK3-13	DIODES	获取价格	Halogen and Antimony Free. âGreenâ Device
DMN10H120SE	DIODES	获取价格	Low On-Resistance
DMN10H120SE_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN10H120SE-13	DIODES	获取价格	Low On-Resistance
DMN10H120SFG	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability
DMN10H120SFG_15	DIODES	获取价格	100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERD
DMN10H120SFG-13	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability
DMN10H120SFG-7	DIODES	获取价格	Qualified to AEC-Q101 Standards for High Reliability

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