Datasheet > DMD3N60-TR

DMD3N60-TR

更新时间： 2024-11-12 01:23:11

品牌	Logo	应用领域
迪一电子 - DYELEC		/
页数	文件大小	规格书
8页	2139K
描述
600V N-Channel Power MOSFET

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DMD3N60-TR 数据手册

3N60

600V N-Channel Power MOSFET

RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A

Fast switching capability

●

PRODUCT SUMMARY

●

V_DS(V)

R_DS(on)(Ω)

Current

Lead free in compliance with EU RoHS directive.

Improved dv/dt capability, high ruggedness

600

3.6 @ V_GS=10V

●

Case: TO-251,TO-252,TO-220,ITO-220

TO-262,TO-263 Package

Pin Definition:

1. Gate

2. Drain

3. Source

Ordering Information

Package

Part No.

DMP3N60-TU

DMD3N60-TR

DMD3N60-TU

DMT3N60-TU

DMF3N60-TU

Packing

75pcs / Tube

Block Diagram

TO-251

TO-252

TO-220

ITO-220

2.5Kpcs / 13” Reel

75pcs / Tube

50pcs / Tube

DMK3N60-TU

DMG3N60-TU

TO-262

TO-263

50pcs / Tube

800pcs / 13" Reel

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

UNIT

Drain-Source Voltage

600

Gate-Source Voltage

±30

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current (Note 2)

3.0

I_D

3.0

I_DM

200

Single Pulsed (Note 3)

Avalanche Energy

E_AS

TO-220/TO-262/TO-263

ITO-220

Power Dissipation

P_D

TO-251/TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ.

3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

1 / 8

May,2015-REV.00

www.dyelec.com

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