Datasheet > DMD4N65-TU

DMD4N65-TU

更新时间： 2024-11-12 01:23:11

品牌	Logo	应用领域
迪一电子 - DYELEC		/
页数	文件大小	规格书
10页	2826K
描述
650V N-Channel Power MOSFET

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DMD4N65-TU 数据手册

4N65

650V N-Channel Power MOSFET

<2.4Ω @ V =10V

●

DS(ON) GS

PRODUCT SUMMARY

●

Fast switching capability

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Lead free in compliance with EU RoHS directive.

Green molding compound

650

2.4 @ V_GS=10V

●

Case: TO-251,TO-252,TO-220,ITO-220

Pin Definition:

TO-262,TO-263 Package

1. Gate

2. Drain

3. Source

Ordering Information

Package

Part No.

DMP4N65-TU

DMD4N65-TR

DMD4N65-TU

DMT4N65-TU

DMF4N65-TU

DMK4N65-TU

DMG4N65-TU

DMG4N65-TR

Packing

75pcs / Tube

TO-251

TO-252

TO-220

ITO-220

TO-262

TO-263

Block Diagram

2.5Kpcs / 13” Reel

75pcs / Tube

50pcs / Tube

800pcs / 13" Reel

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V_DSS

650

Gate-Source Voltage

V_GSS

±30

I_D

4.0

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_DM

Avalanche Energy

Single Pulsed (Note 3)

260

106

E_AS

TO-220/TO-262/TO-263

ITO-220

Power Dissipation

P_D

TO-251/TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, I_AS= 3.6A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

1 / 10

May,2015-REV.00

www.dyelec.com

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