Datasheet > DMC2053UVTQ

DMC2053UVTQ

更新时间： 2023-12-06 20:10:57

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页数	文件大小	规格书
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描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC2053UVTQ 数据手册

DMC2053UVTQ

Electrical Characteristics Q2 P-CHANNEL (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-20

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

-1.0

±100

µA

V_DS= -20V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.45

—

-1.0

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -3.5A

V_GS= -2.5V, I_D= -3.0A

V_GS= -1.8V, I_D= -2.0A

V_GS= 0V, I_S= -1A

110

168

Static Drain-Source On-Resistance

—

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-0.8

-1.2

—

440

—

C_iss

C_oss

C_rss

R_g

V_DS= -10V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

8.5

5.9

0.6

2.1

3.2

7.8

V_DS= 0V, V_GS= 0V, f = 1MHz

V_DS= -4V, I_D= -3.5A

Total Gate Charge (V_GS= -4.5V)

Gate-Source Charge

Q_g

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_GS= -4.5V, V_DS= -4V,

R_G= 6Ω, R_L= 4Ω

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

10.5

3.0

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= -2.0A, di/dt = -100A/μs

Q_RR

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

3 of 10

www.diodes.com

July 2019

DMC2053UVTQ

Document number: DS41617 Rev. 2 - 2

1 234 5 6 7...10

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