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DMC205E0 PDF预览

DMC205E0

更新时间: 2024-01-11 07:51:14
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 520K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN

DMC205E0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:10 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):75JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1900 MHz
Base Number Matches:1

DMC205E0 数据手册

 浏览型号DMC205E0的Datasheet PDF文件第2页浏览型号DMC205E0的Datasheet PDF文件第3页浏览型号DMC205E0的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC205E0  
Silicon NPN epitaxial planar type  
For High frequency amplication  
DMC505E0 in Mini6 type package  
Features  
Package  
High transition frequency fT  
Code  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini6-G4-B  
Pin Name  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Emitter (Tr2)  
6: Collector (Tr1)  
Basic Part Number  
Dual DSC2F01 (Individual)  
Packaging  
Marking Symbol: C8  
Internal Connection  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings T = 25°C  
a
(C1) (E2) (C2)  
6
5
4
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
15  
Tr2  
Tr1  
10  
V
3
50  
V
1
2
3
(E1) (B1) (B2)  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
300  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
10  
3
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 µA, IC = 0  
V
ICBO  
hFE  
VCB = 10 V, IE = 0  
1
µA  
VCE = 4 V, IC = 5 mA  
75  
220  
hFE  
(Small/Large)  
hFE ratio *  
VCE = 4 V, IC = 5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 20 mA, IB = 4 mA  
0.5  
V
fT  
VCE = 4 V, IC = 5 mA  
1.9  
1.2  
12  
GHz  
Collector output capacitance  
Cob  
VCB = 4 V, IE = 0, f = 1 MHz  
pF  
ps  
(Common base, input open circuited)  
Collector-base parameter  
rbb'CC VCE = 4 V, IC = 5 mA, f = 31.9 MHz  
Crb VCE = 4 V, IC = 0 , f = 1 MHz  
Reverse transfer capacitance  
(Common base)  
0.6  
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. AED  
1

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