Datasheet > DMC25D0UVT

DMC25D0UVT

更新时间： 2023-12-06 20:09:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
11页	461K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMC25D0UVT 数据手册

DMC25D0UVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_D



Low On-Resistance

Device

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low Input Capacitance

25V

0.4 A

-3.2 A

-2.6 A

4Ω @ V_GS= 4.5V

80mΩ @ V_GS= -12V

125mΩ @ V_GS= -4.5V

Fast Switching Speed

Low Input/Output Leakage

-30V

ESD Protected Gate on N-Channel (>6kV Human Body Model)

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Mechanical Data



Case: TSOT26

Case Material: Molded Plastic, ―Green‖ Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram

Applications



DC-DC Converters

Power Management Functions

Load Switch



Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.013 grams (Approximate)



TSOT26

Gate Protection

Diode

Top View

Internal Circuit

Q2 P-Channel MOSFET

Q1 N-Channel MOSFET

Ordering Information (Note 4)

Part Number

DMC25D0UVT-7

DMC25D0UVT-13

Case

TSOT26

Packaging

3000 / Tape & Reel

10000 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

C5D = Product Type Marking Code

YM or YM = Date Code Marking

Y or Y= Year (ex: C = 2015)

C5D

M = Month (ex: 9 = September)

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 11

www.diodes.com

April 2015

DMC25D0UVT

Document number: DS37508 Rev. 3 - 2

12 3 4 5 6 7...11

中文翻译

下载PDF

与DMC25D0UVT相关器件

型号	品牌	获取价格	描述	数据表
DMC25D0UVT_15	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D0UVT-13	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D0UVT-7	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D1UVT	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D1UVT_15	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D1UVT-13	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC25D1UVT-7	DIODES	获取价格	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC26100	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178A
DMC261000R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178A
DMC26101	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS CO

与DMC25D0UVT相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

4
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

4
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

DMC25D0UVT

DMC25D0UVT 数据手册

与DMC25D0UVT相关器件

与DMC25D0UVT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMC25D0UVT

DMC25D0UVT 数据手册

与DMC25D0UVT相关器件

与DMC25D0UVT相关文章

您还可以找

您在本页遇到什么问题？