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DMC205E00R PDF预览

DMC205E00R

更新时间: 2024-02-14 00:22:42
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 531K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN

DMC205E00R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:10 V
配置:SEPARATE, 2 ELEMENTSJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1900 MHz
Base Number Matches:1

DMC205E00R 数据手册

 浏览型号DMC205E00R的Datasheet PDF文件第2页浏览型号DMC205E00R的Datasheet PDF文件第3页浏览型号DMC205E00R的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC205E0  
Silicon NPN epitaxial planar type  
For High frequency amplication  
DMC505E0 in Mini6 type package  
Features  
Package  
High transition frequency fT  
Code  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini6-G4-B  
Pin Name  
1: Emitter (Tr1)  
ase (Tr1)  
(Tr2)  
4: Collector (Tr2)  
5: Emitter (Tr2)  
6: Collector (Tr1)  
Basic Part Number  
Dual DSC2F01 (Individual)  
Packaging  
Marking Symbol: C8  
Internal Connection  
Embossed type (Thermo-compression sealing): 3000 ps / retandard)  
Absolute Maximum Ratings T = 25°C  
a
(C1) (E2) (C2)  
6
5
4
Parameter  
Collector-base voltage (Emitter pen)  
Collector-emitter voltage (Base open
Emitter-base voltage (Colletor ope)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
Rating  
Uni
V
15  
Tr2  
Tr1  
10  
V
50  
V
1
2
3
(E1) (B1) (B2)  
mA  
mW  
°C  
°C  
Total power disspatio
300  
Junction tmperatur
Tj  
150  
rage temeratre  
T
stg  
–55 to +150  
Electrical Ccs T = 25°C±3°C  
Pa
Symbol  
Conditions  
Min  
10  
3
Typ  
Max  
Unit  
V
Collector-emitter voltagase open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 µA, IC = 0  
V
ICBO  
hFE  
VCB = 10 V, IE = 0  
1
µA  
VCE = 4 V, IC = 5 mA  
75  
220  
hFE  
(Small/Large)  
hFE ratio *  
VCE = 4 V, IC = 5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 20 mA, IB = 4 mA  
0.5  
V
fT  
VCE = 4 V, IC = 5 mA  
1.9  
1.2  
12  
GHz  
Collector output capacitance  
Cob  
VCB = 4 V, IE = 0, f = 1 MHz  
pF  
ps  
(Common base, input open circuited)  
Collector-base parameter  
rbb'CC VCE = 4 V, IC = 5 mA, f = 31.9 MHz  
Crb VCE = 4 V, IC = 0 , f = 1 MHz  
Reverse transfer capacitance  
(Common base)  
0.6  
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. AED  
1

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