Datasheet > DMC2053UVTQ

DMC2053UVTQ

更新时间： 2023-12-06 20:10:57

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
10页	504K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC2053UVTQ 数据手册

DMC2053UVTQ

Typical Characteristics - P-CHANNEL (continued)

0.2

0.18

0.16

0.8

0.6

0.4

0.2

V_GS= -1.8V, I_D= -2.0A

V_GS= -2.5V, I_D= -3.0A

0.14

0.12

0.1

I_D= -1mA

I_D= -250μA

0.08

0.06

0.04

0.02

V_GS= -4.5V, I_D= -3.5A

-50 -25

100 125 150

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 19. On-Resistance Variation with Junction

Temperature

Figure 20. Gate Threshold Variation vs. Junction

Temperature

1000

V_GS= 0V

f = 1MHz

C_iss

100

C_oss

C_rss

T_J= 85^oC

T_J= 150^oC

T_J= 25^oC

T_J= 125^oC

T_J= -55^oC

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 21. Diode Forward Voltage vs. Current

Figure 22. Typical Junction Capacitance

100

R_DS(ON)

Limited

P_W= 100µs

P_W= 1ms

P_W= 10ms

P_W= 100ms

T_J(Max)= 150℃

V_DS= -15V, I_D= -6.0A

T_C= 25℃

0.1

0.01

P_W= 1s

P_W= 10s

Single Pulse

DUT on 1*MRP

Board

V_GS= -4.5V

10 12 14 16 18

Q_g(nC)

Figure 23. Gate Charge

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 24. SOA, Safe Operation Area

7 of 10

www.diodes.com

July 2019

DMC2053UVTQ

Document number: DS41617 Rev. 2 - 2

1...4 5 678 9 10

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